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Advanced SMDs (IV Assembler, 3840 EU/t): inductor, capacitor, diode, transistor, all with polybenzimidazole

Chain id: zpm_asmd · Tags: Infinite source, Unverified

Era setup: ZPM & Classic Stargate

Plan modules: ZPM circuit (Quantum Mainframe)

Tips: 6, 1 unverified

Machines

IV Assembler · 8 s · 3840 EU/t · 144 mB PBIIV
PolybenzimidazolePolybenzimidazole (zpm_pbi)144 mBOak 11 HSS-E ring · 4 fine palladium wireHSS-E ringFine palladium wire1
up to 8 192 EU/t8 s
Advanced SMD Inductor16 Advanced SMD inductor16
gtceu:iv_assembler
IV Assembler · 4 s · 3840 EU/t · 36 mB PBIIV
PolybenzimidazolePolybenzimidazole (zpm_pbi)36 mBOak 12 PBI foil · 1 HSS-S foilPBI foilHSS-S foil1
up to 8 192 EU/t4 s
Advanced SMD Capacitor16 Advanced SMD capacitor16
gtceu:iv_assembler
IV Assembler · 32 s · 3840 EU/t · 288 mB PBIIV
PolybenzimidazolePolybenzimidazole (zpm_pbi)288 mBOak 11 indium gallium phosphide dust · 16 fine NbTi wireIndium gallium phosphide dustFine NbTi wire1
up to 8 192 EU/t32 s
Advanced SMD Diode64 Advanced SMD diode64
gtceu:iv_assembler
IV Assembler · 8 s · 3840 EU/t · 144 mB PBIIV
PolybenzimidazolePolybenzimidazole (zpm_pbi)144 mBOak 11 vanadium gallium foil · 8 fine HSS-G wireVanadium gallium foilFine HSS-G wire1
up to 8 192 EU/t8 s
Advanced SMD Transistor16 Advanced SMD transistor16
gtceu:iv_assembler

Flow

How to build

  1. Drawers first, one per input: HSS-E rings, fine palladium wire, PBI foil, HSS-S foil, indium gallium phosphide dust, fine NbTi wire, vanadium gallium foil, fine HSS-G wire. One PBI drum shared by a Pipez fluid pipe with four branches. Four assemblers, one per product, each behind its own router with an Item Filter. — functionalstorage:oak_1, gtceu:hsse_ring, gtceu:fine_hssg_wire, gtceu:polybenzimidazole_foil
  2. Inductor assembler: 1 HSS-E ring + 4 fine palladium wire + 144 mB PBI → 16 inductors in 8 s at 3840 EU/t. An IV Assembler on an IV hatch; no circuit in the bus. Output drawer Keep Exact 32. — gtceu:iv_assembler, gtceu:advanced_smd_inductor
  3. Capacitor assembler: 2 PBI foil + 1 HSS-S foil + 36 mB PBI → 16 capacitors in 4 s. The fastest recipe and the most used (the crystal line eats 8 + 6 per craft), so give it the biggest PBI foil drawer. — gtceu:iv_assembler, gtceu:advanced_smd_capacitor, gtceu:polybenzimidazole_foil
  4. Diode assembler: 1 indium gallium phosphide dust + 16 fine NbTi wire + 288 mB PBI → 64 diodes in 32 s. Start it first and let it fill a drawer to 256. — gtceu:iv_assembler, gtceu:advanced_smd_diode, gtceu:indium_gallium_phosphide_dust
  5. Transistor assembler: 1 vanadium gallium foil + 8 fine HSS-G wire + 144 mB PBI → 16 transistors in 8 s. Needed by the crystal processor (6 per craft) and the draco lines later. — gtceu:iv_assembler, gtceu:advanced_smd_transistor, gtceu:vanadium_gallium_foil
  6. Power: each assembler is a single block that takes at most 3840 EU/t from an IV-rated cable run (an IV machine accepts up to 8192 V, an EV one only 2048, so an EV Assembler cannot run these). Easy to miss: they idle most of the time, so one cable run feeding all four is enough, and the capacitor/inductor machines can share a drawer queue if you are short of IV assemblers. — gtceu:iv_assembler, gtceu:platinum_single_cable

Tips

  • Recipes (CircuitRecipes, not changed by the pack; circuit_parts.js only adds the living and draconic SMDs): all four are IV-Assembler recipes at 3840 EU/t (above the EV cap of 2048). Inductor = 1 HSS-E ring + 4 fine palladium wire + 144 mB PBI → 16, 160 ticks. Capacitor = 2 PBI foil + 1 HSS-S foil + 36 mB PBI → 16, 80 ticks. Diode = 1 indium gallium phosphide dust + 16 fine niobium titanium wire + 288 mB PBI → 64, 640 ticks. Transistor = 1 vanadium gallium foil + 8 fine HSS-G wire + 144 mB PBI → 16, 160 ticks. The resistor (1 graphene dust + 4 fine platinum wire + 288 mB PBI → 16, 160 ticks) is not used by any ZPM recipe in this guide.
  • Where they are used: the quantum mainframe (Assembly Line: 8 inductors + 16 capacitors + 8 diodes), the crystal processor (6 capacitors + 6 transistors), crystal assembly (4 inductors + 8 capacitors), crystal computer (4 diodes) and the UV crystal mainframe (8 + 16 + 8). The quantum processor, assembly and computer also have _asmd circuit-assembler variants that use far fewer parts and half the time (processor 3 + 3 ASMD at 100 ticks, assembly 2 inductors + 4 capacitors at 200 ticks, computer 2 diodes at 200 ticks) so one batch of ASMDs goes a long way.
  • One mainframe needs only 8 + 16 + 8 ASMDs, so ONE craft of each product covers 2 mainframes (inductor, capacitor) and 8 (diode): this chain is small. The expensive inputs are HSS-S foil (luv_hsss) and the fine wires; PBI is the only fluid (zpm_pbi). The plain SMD line (smd chain) is still needed for the quantum processor, assembly and computer craft that use plain SMDs.
  • HSS-E rings and HSS-S foil: HSS-E is the IV era alloy (abs_super_ebf chain), HSS-S the LuV one; ring = extruder or lathe from a rod, foil = bender from a plate. Fine HSS-G wire and fine NbTi wire: wiremill. Vanadium gallium foil: the pack gives vanadium gallium a fine-wire flag; the foil itself is a bender product of the vanadium gallium plate. Unverified: the exact wiremill and bender times, and the vanadium gallium source (see zpm_alloys).
  • Sub-steps people skip: (1) each product needs its OWN assembler, because four different 3840 EU/t recipes in one machine would fight over the same input drawers; (2) PBI foil is a different item from the PBI plate and from the bucket; (3) diodes come 64 per craft but need the longest time (32 s), so they are the first stock to build; (4) circuit 0, no ghost circuit: do not leave a circuit in the bus.
  • Unverified that the Advanced SMD resistor is never needed before UV (no ZPM recipe here uses it), and the graphene source for it.

Bill of materials

Item Qty
gtceu:iv_assembler 4
gtceu:platinum_single_cable 8
functionalstorage:oak_1 10
modularrouters:modular_router 6
gtceu:lv_robot_arm 8
gtceu:item_filter 8
pipez:item_pipe 16
pipez:fluid_pipe 2
gtceu:steel_drum 2

Needs / Feeds

  • Main source for: gtceu:advanced_smd_inductor, gtceu:advanced_smd_capacitor, gtceu:advanced_smd_diode, gtceu:advanced_smd_transistor, gtceu:advanced_smd_resistor