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MV circuits and chemistry

Phase id: p6 · Era: MV

The first MV circuit: acid and etchant from water, silver foil boards, gallium arsenide diodes. All of it runs on LV machines. Typical pace (community reports, not independent samples): players report about 5 days in MV (median of 7 runs, range 1 to 17).

Chlorine and hydrochloric acid

  • Module key: plan:chlor · step 32
  • Chain: Chlorine and hydrochloric acid (water → salt water → acid); also Salt water
  • Makes: gtceu:salt_water_bucket, gtceu:chlorine_bucket, gtceu:hydrogen_bucket, gtceu:hydrochloric_acid_bucket
  • Stock: gtceu:hydrochloric_acid_bucket in 6 B drum
  • Power: centrifuge 15 EU/t, electrolyzer 30 EU/t, reactor 7 EU/t
  • Watch out:
    • Only water and one kept sand block go in; salt water is made on site.
    • The electrolyzer takes 36 s per bucket: pipe chlorine and hydrogen straight into the acid reactor, equal amounts.
    • Sodium hydroxide, saltpeter and rock salt pile up: give them a drawer or a voiding cover.
    • This phase needs no oxygen, sulfuric acid or MV machine; those come later.

Etching fluid (iron III chloride)

  • Module key: plan:fecl3 · step 33
  • Chain: Etching fluid (iron III chloride)
  • Uses: gtceu:hydrochloric_acid_bucket, minecraft:iron_ingot
  • Makes: gtceu:iron_iii_chloride_bucket
  • Stock: gtceu:iron_iii_chloride_bucket in 4 B drum
  • Power: reactor 30 EU/t
  • Watch out:
    • Set ghost circuit 1 on the reactor.
    • Each bucket also gives 3 B of hydrogen: put a Fluid Voiding Cover (soft mallet) or a drum on that output or the reactor stalls.
    • 100 mB etches one board; 4 B covers 40 boards.

Phenolic printed circuit boards

  • Module key: plan:pcb · step 34
  • Chain: Phenolic printed circuit board (silver foil + etching)
  • Uses: gtceu:glue_bucket, gtceu:wood_dust, gtceu:iron_iii_chloride_bucket, gtceu:crushed_galena_ore
  • Makes: gtceu:silver_foil, gtceu:phenolic_circuit_board, gtceu:phenolic_printed_circuit_board
  • Stock: gtceu:silver_foil in 64, gtceu:phenolic_printed_circuit_board in 64
  • Power: ore factory, bender, assembler, reactor: 30 EU/t each
  • Watch out:
    • 1 board = 1 silver ingot (4 foil): silver is the bottleneck of the phase.
    • Bender on circuit 10 for ingots (circuit 1 is for plates).
    • The hand-crafted good circuit board is removed in this pack: etching is the only way.
    • Ignore the pack’s cupric chloride etch until you have HV and EV machines.

Gallium arsenide

  • Module key: plan:gaas · step 35
  • Chain: Gallium arsenide (sphalerite + realgar)
  • Uses: gtceu:crushed_sphalerite_ore
  • Makes: gtceu:gallium_dust, gtceu:arsenic_dust, gtceu:gallium_arsenide_dust
  • Stock: gtceu:gallium_arsenide_dust in 16
  • Power: ore factory, void extractor, pulverizer, centrifuge 30 EU/t; mixer 7 EU/t
  • Watch out:
    • Gallium only from sphalerite in the Electric Ore Factory (45 %); plain electrolysis gives 5 %.
    • Arsenic only from realgar, and realgar only from the Void Extractor: start this line early, it is the slow one.
    • Equal gallium and arsenic: 1 + 1 = 4 MV circuits. 1 arsenic needs 2 realgar dust = 1 raw realgar.
    • Unverified in local files: the centrifuge numbers for realgar (1 arsenic per 2 dust, about 64 s); check EMI.
    • Silicon wafers need the same gallium arsenide later (1 small dust per boule).

Diodes

  • Module key: plan:diodes · step 36
  • Chain: Diodes (gallium arsenide + glass + fine wire)
  • Uses: gtceu:gallium_arsenide_dust, gtceu:fine_copper_wire
  • Makes: gtceu:small_gallium_arsenide_dust, gtceu:diode
  • Stock: gtceu:diode in 64
  • Power: assemblers 30 EU/t each
  • Watch out:
    • Small dust: 1 gallium arsenide dust → 4 small dust (grid, or Packer circuit 2).
    • Glass must be molten: glass block → LV Extractor → 144 mB (per diode). Not confirmed in local files: check the extractor recipe in EMI.
    • One assembler makes 3 diodes a minute; build three per circuit assembler.
    • Annealed copper wire makes 2 diodes per craft instead of 1.

Silicon wafers and chips

  • Module key: plan:wafer · step 37
  • Chain: Silicon wafers & chips
  • Uses: gtceu:silicon_dust, gtceu:gallium_arsenide_dust
  • Makes: gtceu:silicon_wafer, gtceu:ilc_chip, gtceu:ram_chip, gtceu:ulpic_chip, gtceu:cpu_chip
  • Power: EBF with cupronickel coils, MV cutter and MV laser engraver
  • Watch out:
    • Engraved wafer to cutter to chips.
    • One engraver per lens avoids swapping lenses.
    • CPU, RAM and NAND chips go into the data sticks and the LuV boards.

MV circuits (Good Electronic Circuit)

  • Module key: plan:mvcirc · step 38
  • Chain: MV circuit line (Good Electronic Circuit); also MV Robot Arm (uses the new circuits)
  • Uses: gtceu:basic_electronic_circuit, gtceu:phenolic_printed_circuit_board, gtceu:diode, gtceu:copper_single_wire, gtceu:mv_electric_motor, gtceu:mv_electric_piston
  • Makes: gtceu:good_electronic_circuit, gtceu:mv_robot_arm
  • Stock: gtceu:good_electronic_circuit in 64, gtceu:mv_robot_arm in 16
  • Power: circuit assembler 30 EU/t (LV machine, 4 circuits a minute)
  • Watch out:
    • Recipe is 30 EU/t: the LV circuit assembler runs it. Use a second one so your LV circuits keep their own machine.
    • The MV circuit assembler needs 2 HV circuits to build, so it comes much later.
    • Each circuit eats 2 LV circuits: keep the LV line at 64 in stock first.
    • Integrated circuits are the next step, not needed for MV machines: silicon boule (EBF 1784 K, 120 EU/t, 7.5 min, 32 silicon dust + 1 small gallium arsenide dust) → MV cutter → MV laser engraver with a red lens → MV cutter → ILC chips.